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1. general description the TZA3026 is a transimpedance ampli?er with automatic gain control (agc), designed to be used in stm4/oc12 ?ber optic links. it ampli?es the current generated by a photo detector (pin diode or avalanche photodiode) and converts it to a differential output voltage. it offers a current mirror of average photo current for rssi monitoring to be used in sff8472 compliant modules. the low noise characteristics makes it suitable for stm4/oc12 applications, but also for fttx applications. 2. features n low equivalent input noise current, typically 67 na (rms) n wide dynamic range, typically 0.85 m a to 1.5 ma (p-p) n differential transimpedance of 14 k w (typical) n bandwidth from dc to 650 mhz (typical) n differential outputs n on-chip agc with possibility of external control n single supply voltage 3.3 v, range 2.9 v to 3.6 v n bias voltage for pin diode n current output of average photo current for rssi monitoring n identical ports available on both sides of die for easy bond layout and rf polarity selection 3. applications n digital ?ber optic receiver modules in telecommunications transmission systems, in high speed data networks or in fttx systems 4. ordering information TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er rev. 01 2 may 2005 product data sheet table 1: ordering information type number package name description version TZA3026u - bare die, dimensions approximately 0.82 mm 1.3 mm -
9397 750 14763 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 may 2005 2 of 15 philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er 5. block diagram fig 1. block diagram 300 w outq agc gnd out v cc gain control biasing peak detector TZA3026 d photo c dref c vcc low noise amplifier single-ended to differential converter output buffers 7 or 13 8 or 14 idref_mon 5 or 16 dref i dref 0.2 i dref i mon i pd r dref 1 or 3 9, 10, 11, 12 6 or 15 4 or 17 iphoto 2 r idref_mon 001aac617
9397 750 14763 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 may 2005 3 of 15 philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er 6. pinning information 6.1 pinning 6.2 pin description fig 2. pad con?guration 001aac618 v cc idref_mon agc outq out gnd gnd v cc idref_mon agc dref iphoto dref out outq gnd gnd 3 1 17 4 16 5 15 6 12 9 11 10 2 7 8 14 13 TZA3026 table 2: bonding pad description bonding pad locations with respect to the center of the die (see figure 10 ), x and y are in m m. symbol pad x y type description dref 1 - 493.6 140 output bias voltage output for pin diode; connect cathode of pin diode to pad 1 or pad 3 iphoto 2 - 493.6 0 input current input; anode of pin diode should be connected to this pad dref 3 - 493.6 - 140 output bias voltage output for pin diode; connect cathode of pin diode to pad 1 or pad 3 v cc 4 - 353.6 - 278.6 supply supply voltage; connect supply voltage to pad 4 or pad 17 idref_mon 5 - 213.6 - 278.6 output current output for rssi measurements; connect a resistor to pad 5 or pad 16 and ground agc 6 - 73.6 - 278.6 input agc voltage; use pad 6 or pad 15 outq 7 66.4 - 278.6 output data output; complement of pad out; use pad 7 or pad 13 out 8 206.4 - 278.6 output data output; use pad 8 or pad 14 [1] gnd 9 346.4 - 278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as possible gnd 10 486.4 - 278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as possible
9397 750 14763 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 may 2005 4 of 15 philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er [1] these pads go high when current ?ows into pad iphoto. 7. functional description the TZA3026 is a transimpedance ampli?er (tia) intended for use in ?ber optic receivers for signal recovery in stm4/oc12 or fttx applications. it ampli?es the current generated by a photo detector (pin diode or avalanche photodiode) and converts it to a differential output voltage. the most important characteristics of the TZA3026 are high receiver sensitivity, wide dynamic range and large bandwidth. excellent receiver sensitivity is achieved by minimizing transimpedance ampli?er noise. the TZA3026 has a wide dynamic range to handle the signal current generated by the pin diode which can vary from 0.85 m a to 1.5 ma (p-p). this is implemented by an agc loop which reduces the preampli?er feedback resistance so that the ampli?er remains linear over the whole input range. the agc loop hold capacitor is integrated on-chip, so an external capacitor is not required. the bandwidth of TZA3026 is optimized for stm4/oc12 application. it works from dc onward due to the absence of offset control loops. therefore the amount of consecutive identical digits (cid) will not effect the output waveform. a differential ampli?er converts the output of the preampli?er to a differential voltage. 7.1 pin diode connections the performance of an optical receiver is largely determined by the combined effect of the transimpedance ampli?er and the pin diode. in particular, the method used to connect the pin diode to the input (pad iphoto) and the layout around the input pad strongly in?uences the main parameters of a transimpedance ampli?er, such as sensitivity, bandwidth, and psrr. sensitivity is most affected by the value of the total capacitance at the input pad. therefore, to obtain the highest possible sensitivity the total capacitance should be as low as possible. gnd 11 486.4 278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as possible gnd 12 346.4 278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as possible outq 13 206.4 278.6 output data output; complement of pad out; use pad 7 or pad 13 out 14 66.4 278.6 output data output; use pad 8 or pad 14 [1] agc 15 - 73.6 278.6 input agc voltage; use pad 6 or pad 15 idref_mon 16 - 213.6 278.6 output current output for rssi measurements; connect a resistor to pad 5 or pad 16 and ground v cc 17 - 353.6 278.6 supply supply voltage; connect supply voltage to pad 4 or pad 17 table 2: bonding pad description continued bonding pad locations with respect to the center of the die (see figure 10 ), x and y are in m m. symbol pad x y type description
9397 750 14763 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 may 2005 5 of 15 philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er the parasitic capacitance can be minimized through: 1. reducing the capacitance of the pin diode. this is achieved by proper choice of pin diode and typically a high reverse voltage. 2. reducing the parasitics around the input pad. this is achieved by placing the pin diode as close as possible to the tia. the pin diode can be biased with a positive or a negative voltage. figure 3 shows the pin diode biased positively, using the on-chip bias pad dref. the voltage at dref is derived from v cc by a low-pass ?lter comprising internal resistor r dref and external capacitor c2 which decouples any supply voltage noise. the value of external capacitor c2 affects the value of psrr and should have a minimum value of 470 pf. increasing this value improves the value of psrr. the current through r dref is measured and sourced at pad idref_mon, see section 7.3 . if the biasing for the pin diode is done external to the ic, pad dref can be left unconnected. if a negative bias voltage is used, the con?guration shown in figure 4 can be used. in this con?guration, the direction of the signal current is reversed to that shown in figure 3 . it is essential that in these applications, the pin diode bias voltage is ?ltered to achieve the best sensitivity. for maximum freedom on bonding location, 2 outputs are available for dref (pads 1 and 3). these are internally connected. both outputs can be used if necessary. if only one is used, the other can be left open. fig 3. the pin diode connected between the input and pad dref fig 4. the pin diode connected between the input and a negative supply voltage 001aac619 r dref 300 w c2 470 pf dref i pd iphoto 4 or 17 1 or 3 2 TZA3026 v cc 001aac620 r dref 300 w dref negative bias voltage i pd iphoto 4 or 17 1 or 3 2 TZA3026 v cc
9397 750 14763 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 may 2005 6 of 15 philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er 7.2 automatic gain control the TZA3026 transimpedance ampli?er can handle input currents from 0.85 m a to 1.5 ma which is equivalent to a dynamic range of 65 db (electrical equivalent with 32.5 db optical). at low input currents, the transimpedance must be high to obtain enough output voltage, and the noise should be low enough to guarantee a minimum bit error rate. at high input currents however, the transimpedance should be low to prevent excessive distortion at the output stage. to achieve the dynamic range, the gain of the ampli?er depends on the level of the input signal. this is achieved in the TZA3026 by an agc loop. the agc loop comprises a peak detector and a gain control circuit. the peak detector detects the amplitude of the signal and stores it on a hold capacitor. the hold capacitor voltage is compared to a threshold voltage. the agc is only active when the input signal level is larger than the threshold level and is inactive when the input signal is smaller than the threshold level. when the agc is inactive, the transimpedance is at its maximum. when the agc is active, the feedback resistor value of the transimpedance ampli?er is reduced, reducing its transimpedance, to keep the output voltage constant. figure 5 shows the transimpedance as function of the input current. to reduce sensitivity to offsets and output loads, the agc detector senses the output just before the output buffer. figure 6 shows the agc voltage as function of the input current. fig 5. transimpedance as function of the input current fig 6. agc voltage as function of the input current 001aac621 i pd ( m a) 110 4 10 3 10 10 2 10 1 10 2 transimpedance (k w ) 10 - 1 001aac622 2 1 3 4 v agc (v) 0 i pd ( m a) 110 4 10 3 10 10 2
9397 750 14763 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 may 2005 7 of 15 philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er for applications where the transimpedance is controlled by the tia it is advised to leave the agc pads unconnected to achieve fast attack and decay times. the agc function can be overruled by applying a voltage to pad agc. in this con?guration, connecting pad agc to ground gives maximum transimpedance and connecting it to v cc gives minimum transimpedance. this is depicted in figure 7 . the agc voltage should be derived from the v cc for proper functioning. for maximum freedom on bonding location, 2 pads are available for agc (pads 6 and 15). these pads are internally connected. both pads can be used if necessary. 7.3 monitoring rssi via idref_mon to facilitate rssi monitoring in modules (e.g. sff8472 compliant sfp modules), a current output is provided. this output gives a current which is 20 % of the average dref current through the 300 w bias resistor. by connecting a resistor to the idref_mon output, a voltage proportional with the average input power can be obtained. the rssi monitoring is implemented by measuring the voltage over the 300 w bias resistor. this method is preferred over simple current mirror because at small photo currents the voltage drop over the resistor is very small. this gives a higher bias voltage yielding better performance of the photodiode. for maximum freedom on bonding location, 2 pads are available for idref_mon (pads 5 and 16). these pads are internally connected. both pads can be used if necessary. if only one is used, the other can be left open. fig 7. transimpedance as function of the agc voltage 001aac623 v agc (v) 0.3v cc 0.9v cc 0.7v cc 0.5v cc 10 1 10 2 transimpedance (k w ) 10 - 1
9397 750 14763 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 may 2005 8 of 15 philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er 8. limiting values 9. characteristics table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage - 0.5 +3.8 v v n pad dc voltage pad iphoto - 0.5 +2.0 v out, outq - 0.5 v cc + 0.5 v agc, idref_mon - 0.5 v cc + 0.5 v dref - 0.5 v cc + 0.5 v i n pad dc current pad iphoto - 4.0 +4.0 ma out, outq - 10 +10 ma agc, idref_mon - 0.2 +0.2 ma dref - 4.0 +4.0 ma p tot total power dissipation - 300 mw t amb ambient temperature - 40 +85 c t j junction temperature - 150 c t stg storage temperature - 65 +150 c table 4: characteristics typical values at t j =25 c and v cc = 3.3 v; minimum and maximum values are valid over the entire ambient temperature range and supply voltage range; all voltages are measured with respect to ground; unless otherwise speci?ed. symbol parameter conditions min typ max unit v cc supply voltage 2.9 3.3 3.6 v i cc supply current ac-coupled; r l(dif) = 100 w ; excluding i dref and i idref_mon -18 21 ma p tot total power dissipation - 60 76 mw t j junction temperature - 40 - +125 c t amb ambient temperature - 40 +25 +85 c r tr small-signal transresistance of the receiver measured differentially; ac-coupled, r l(dif) = 100 w 9.5 14 19 k w f -3db(h) high frequency - 3 db point c pd = 0.7 pf; v cc = 3.3 v 440 650 - mhz i n(tot)(rms) total integrated rms noise current over bandwidth referenced to input; c pd = 0.7 pf; d f i = 450 mhz third-order bessel ?lter [1] -67 79 na automatic gain control loop: pad agc t att attack time agc pad unconnected - 14 - m s t decay decay time agc pad unconnected - 40 - m s v o(data)(p-p) data output voltage (peak-to-peak value) referenced to output; measured differentially - 125 - mv
9397 750 14763 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 may 2005 9 of 15 philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er [1] guaranteed by design. [2] the input current range is determined by the allowed pulse width distortion (pwd), which is <5 % over the whole input current range. the pwd is de?ned as: , where t is the clock period. bias voltage: pad dref r dref resistance between pad dref and pad v cc tested at dc level; t amb =25 c 250 300 350 w tc rdref temperature coef?cient r dref - 0.33 - w / c input: pad iphoto i pd(p-p) input current (peak-to-peak value) [2] - 1500 - +1500 m a v bias input bias voltage 700 850 1000 mv monitor: pad idref_mon v mon monitor voltage [1] 0- v cc - 0.4 v a mon monitor current ratio ratio i dref_mon / i dref 19.5 20 20.5 % i mon(offset) monitor offset current t amb =25 c 0 10 20 m a tc mon(offset) temperature coef?cient monitor offset current - 30 - na/ c data outputs: pads out and outq v o(cm) common mode output voltage ac-coupled; r l(dif) = 100 w -v cc - 1.2 - v v o(dif)(p-p) differential load output voltage (peak-to-peak value) ac-coupled; r l(dif) = 100 w i pd = 0.84 m a (p-p) r tr 812 - mv i pd = 100 m a (p-p) - 125 - mv i pd = 1500 m a (p-p) - 250 500 mv r o(dif) differential output resistance tested at dc level - 100 - w t r rise time 20 % to 80 %; i pd = 100 m a(p-p) - 300 - ps t f fall time 80 % to 20 %; i pd = 100 m a (p-p) - 300 - ps table 4: characteristics continued typical values at t j =25 c and v cc = 3.3 v; minimum and maximum values are valid over the entire ambient temperature range and supply voltage range; all voltages are measured with respect to ground; unless otherwise speci?ed. symbol parameter conditions min typ max unit pwd pulse width t ------------------------------- 0.5 () C ? ?? 100 % =
9397 750 14763 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 may 2005 10 of 15 philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er 10. application information for maximum freedom on bonding location, 2 outputs are available for out and outq. the outputs should be used in pairs: pad 14 with pad 7 or pad 8 with pad 13. pad 8 is internally connected with pad 14, pad 7 is internally connected with pad 13. the device is guaranteed with only one pair used. the other pair should be left open. two examples of the bonding possibilities are shown in figure 8 . fig 8. application diagram highlighting ?exible pad lay out c outq c out idref_mon v cc pin TZA3026u gnd 001aac624 c out c outq v cc idref_mon pin TZA3026u gnd 001aac625
xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x 9397 750 14763 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 may 2005 11 of 15 philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er 11. test information total impedance of the test circuit (z t ) is calculated by the equation z t =s 21 (r+z in ) 2, where s 21 is the insertion loss of ports 1 and 2. typical values: r = 330 w , z in =75 w . fig 9. test circuit 001aac626 55 w 330 w r 8.2 k w port2 z o = 50 w z o = 50 w z o = 50 w port1 dc-in data clock gnd out outq iphoto network analyzer TZA3026 v cc pattern generator s-parameter test set 22 nf 22 nf 22 nf 9, 10, 11, 12 4 or 17 8 or 14 7 or 13 2 trigger input 2 1 sampling oscilloscope
9397 750 14763 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 may 2005 12 of 15 philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er 12. bare die information 13. package outline not applicable. origin is center of die. fig 10. bonding pad locations table 5: physical characteristics of the bare die parameter value glass passivation 0.3 m m psg (phosphosilicate glass) on top of 0.8 m m silicon nitride bonding pad dimension minimum dimension of exposed metallization is 90 m m 90 m m (pad size = 100 m m 100 m m) except pads 2 and 3 which have exposed metallization of 80 m m 80 m m (pad size = 90 m m 90 m m) metallization 2.8 m m alcu thickness 380 m m nominal die dimension 820 m m 1300 m m ( 20 m m 2 ) backing silicon; electrically connected to gnd potential through substrate contacts attach temperature <440 c; recommended die attach is glue attach time <15 s 456 (0,0) x y 17 16 15 14 13 12 11 78910 001aac627 1 2 3
9397 750 14763 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 may 2005 13 of 15 philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er 14. handling information 14.1 general inputs and outputs are protected against electrostatic discharge in normal handling. however, to be completely safe, it is desirable to take normal precautions appropriate to handling mos devices; see jesd625-a and/or iec61340-5 . 14.2 additional information pad iphoto has limited protection to ensure good rf performance. this pad should be handled with extreme care. 15. revision history table 6: revision history document id release date data sheet status change notice doc. number supersedes TZA3026_1 20050502 product data sheet - 9397 750 14763 -
philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er 9397 750 14763 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 may 2005 14 of 15 16. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 17. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 18. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. bare die all die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of philips' delivery. if there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. there are no post packing tests performed on individual die or wafer. philips semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. accordingly, philips semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. it is the responsibility of the customer to test and qualify their application in which the die is used. 19. trademarks notice all referenced brands, product names, service names and trademarks are the property of their respective owners. 20. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 2 may 2005 document number: 9397 750 14763 published in the netherlands philips semiconductors TZA3026 sdh/sonet stm4/oc12 transimpedance ampli?er 21. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 ordering information . . . . . . . . . . . . . . . . . . . . . 1 5 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 functional description . . . . . . . . . . . . . . . . . . . 4 7.1 pin diode connections . . . . . . . . . . . . . . . . . . . 4 7.2 automatic gain control . . . . . . . . . . . . . . . . . . . 6 7.3 monitoring rssi via idref_mon . . . . . . . . . . 7 8 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 application information. . . . . . . . . . . . . . . . . . 10 11 test information . . . . . . . . . . . . . . . . . . . . . . . . 11 12 bare die information . . . . . . . . . . . . . . . . . . . . 12 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 14 handling information. . . . . . . . . . . . . . . . . . . . 13 14.1 general . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14.2 additional information . . . . . . . . . . . . . . . . . . . 13 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 16 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14 17 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 18 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 19 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 20 contact information . . . . . . . . . . . . . . . . . . . . 14

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